NPT1004 page 1 NPT1004 features ? optimized for pulsed, wimax, w-cdma, lte, and other light thermal load applications from dc to 4.0ghz ? 2500mhz performance ? 45w p 3db cw power ? 13.5 db small signal gain ? 55% effciency at p 3db ? 100% rf tested ? low cost, surface mount soic package ? high reliability gold metallization process ? lead-free and rohs compliant ? subject to ear99 export control dc - 4000mhz 45 watt, 28 volt gan hemt rf specifcations (2-tone): v ds = 28v, i dq = 400ma, frequency = 2500mhz, tone spacing = 1mhz, t c = 25c, measured in nitronex test fixture symbol parameter min typ max units p 3db average output power at 3db compression 35 45 - w p 1db average output power at 1db compression - 28 - w g ss small signal gain 12.5 13.5 - db h drain effciency at 3db gain compression 50 55 - % gallium nitride 28v, 45w rf power transistor built using the sigantic ? nrf1 process - a proprietary gan-on-silicon technology typical ofdm performance (2500-2700mhz): v ds = 28v, i dq = 350ma, p out, avg = 37dbm, single carrier ofdm waveform 64-qam 3/4, 8 burst, continuous frame data, 10 mhz channel bandwidth. peak/avg = 10.3db @ 0.01% probabil - ity on ccdf. t c = 25c. measured in load pull system (refer to table 2 and figure 1) symbol parameter typ units evm error vector magnitude 2.0 % g p power gain 13.0 db h drain effciency 27 % typical ofdm performance (3300-3500mhz): v ds = 28v, i dq = 350ma, p out, avg = 36.5dbm, single carrier ofdm waveform 64-qam 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 mhz channel bandwidth. peak/avg = 10.3db @ 0.01% probability on ccdf. t c = 25c. measured in load pull system (refer to table 2 and figure 1) symbol parameter typ units evm error vector magnitude 2.0 % g p power gain 10.5 db h drain effciency 25 % nds-010 rev. 4, april 2013
NPT1004 page 2 NPT1004 dc specifcations: t c =25c symbol parameter min typ max units off characteristics v bds drain-source breakdown voltage (v gs = -8v, i d = 16ma) 100 - - v i dlk drain-source leakage current (v gs = -8v, v ds = 60v) - 2 10 ma on characteristics v t gate threshold voltage (v ds = 28v, i d = 16ma) -2.3 -1.8 -1.3 v v gsq gate quiescent voltage (v ds = 28v, i d = 350ma) -2.0 -1.5 -1.0 v r on on resistance (v gs = 2v, i d = 120ma) - 0.25 0.30 w i d drain current (v ds = 7v pulsed, 300ms pulse width, 0.2% duty cycle, v gs = 2v) 7. 5 9.5 - a absolute maximum ratings: not simultaneous, t c =25c unless otherwise noted symbol parameter max units v ds drain-source voltage 100 v v gs gate-source voltage -10 to 3 v p t total device power dissipation (derated above 25c) 40 w q jc thermal resistance (junction-to-case) 4.3 c/w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 c hbm human body model esd rating (per jesd22-a114) 1b (>500v) mm machine model esd rating (per jesd22-a113) m1(>50v) msl moisture sensitivity level (per ipc/jedec j-std-020): rating of 3 at 260 c package peak temperature nds-010 rev. 4, april 2013
NPT1004 page 3 NPT1004 z s is the source impedance presented to the device. z l is the load impedance presented to the device. table 1: optimum source and load impedances for cw gain, drain effciency, and output power performance frequency (mhz) z s (w) z l (w) p sat (w) g ss (db) drain effciency @ p sat (%) 900 2.0 + j2.7 6.0 + j3.3 45 22.5 72 1500 1.6 - j0.8 4.5 + j0.5 45 18.5 70 2500 2.0 - j3.2 3.5 - j5.0 45 14.0 65 3500 3.2 - j6.5 2.9 - j8.0 35 12.0 60 load-pull data, reference plane at device leads v ds =28v, i dq =350ma, t a =25c unless otherwise noted table 2: optimum source and load impedances for wimax gain, drain effciency, output power, and linearity performance frequency (mhz) z s (w) z l (w) p out (w) gain (db) drain effciency (%) 2500 1 2.1 - j7.6 3.1 - j3.9 5 14.0 27 2600 1 2.3 - j7.7 3.3 - j4.4 5 13.0 27 2700 1 2.3 - j9.0 3.4 - j4.7 5 13.0 27 3300 2 3.3 - j11.8 3.7 - j7.2 6.3 11.5 30 3500 2 3.5 - j13.5 3.5 - j10.0 4.5 10.5 25 3800 2 4.5 - j16.2 3.7 - j11.2 3.2 8.0 17 note 1: single carrier ofdm waveform 64-qam 3/4, 8 burst, continuous frame data, 10 mhz channel bandwidth. peak/avg = 10.3db @ 0.01% probability on ccdf, 2% evm. note 2: single carrier ofdm waveform 64-qam 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 mhz channel bandwidth. peak/avg = 10.3db @ 0.01% probability on ccdf, 2% evm. figure 1 - optimal impedances for cw and ofdm performance (a) cw impedances (b) ofdm impedances nds-010 rev. 4, april 2013
NPT1004 page 4 NPT1004 load-pull data, reference plane at device leads v ds =28v, i dq =350ma, t a =25c unless otherwise noted. figure 2 - typical cw performance, frequency = 900 to 3500mhz, i dq =400ma figure 3 - ofdm performance tuned for p out at 2% evm in load-pull system figure 4 - ofdm performance tuned for p out at 1.5% evm in load-pull system figure 6 - quiescient gate voltage (v gsq ) required to reach i dq as a function of case temperature figure 5 - ofdm performance tuned for p out at 2% evm in load-pull system figure 7 - mttf of nrf1 devices as a function of junction temperature nds-010 rev. 4, april 2013
NPT1004 page 5 NPT1004 d package dimensions and pinout 1 2 3 4 8 6 5 7 9 cha m f er 1. n c 2 . g a t e 3 . g a t e 4. n c 7. d r ain 6 . drain 5 . nc 8. n c 9 . sou r c e pa d ( b o t t om) e b d c a f (6x) f (8x) g 1 s e a t ing p lan e g m s e a ting p l a n e l h a/2 d / 2 .150 solder paste .080" x .120" (typ) solder paste .020" x .040" (8x typ) .100 .105 .176 .145 .140 heat sink pedestal pwb cutout r.016 (4x typ) .055 .180 .030 pwb pad (8x typ) solder mask .005" relief (typ) mounting footprints ordering information part number order multiple description NPT1004dt 97 tube; NPT1004 in d (psop2) package NPT1004dr 1500 tape and reel; NPT1004 in d (psop2) package inches millimeters dim min max min max a 0.18 9 0.19 6 4.80 4.98 b 0.15 0 0.157 3.81 3.99 c 0.107 0.123 2.72 3.12 d 0.071 0.870 1.80 2.21 e 0.230 0.244 5.84 6.22 f 0.50 bsc 1.270 bsc f 0.0138 0.0192 0.35 0.49 g 0.055 0.065 1.40 1.65 g1 0.000 0.004 0.00 0.10 h 0.0075 0.0098 0.19 0.25 l 0.016 0.035 0.40 0.89 m 0 8 0 8 1. gate 2. gate 3. gate 4. gate 5. drain 6. drain 7. drain 8. drain 9. source pad (bottom) 1: to fnd a nitronex contact in your area, visit our website at http://www.nitronex.com nds-010 rev. 4, april 2013
NPT1004 page 6 NPT1004 nitronex, llc 2305 presidential drive durham, nc 27703 usa +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com additional information this part is lead-free and is compliant with the rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). important notice nitronex, llc reserves the right to make corrections, modifcations, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all products are sold subject to nitronex terms and conditions of sale supplied at the time of order acknowledgment. the latest information from nitronex can be found either by calling nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. nitronex warrants performance of its packaged semiconductor or die to the specifcations applicable at the time of sale in accordance with nitronex standard warranty. testing and other quality control techniques are used to the extent nitronex deems necessary to support the warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. nitronex assumes no liability for applications assistance or customer product design. customers are responsible for their product and applications using nitronex semiconductor products or services. to minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. nitronex does not warrant or represent that any license, either express or implied, is granted under any nitronex patent right, copyright, mask work right, or other nitronex intellectual property right relating to any combination, machine or process in which nitronex products or services are used. reproduction of information in nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. any alteration of the contained information invalidates all warranties and nitronex is not responsible or liable for any such statements. nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. should buyer purchase or use nitronex, llc products for any such unintended or unauthorized application, buyer shall indemnify and hold nitronex, llc, its of f cers, employees, subsidiaries, affliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that nitronex was negligent regarding the design or manufacture of said products. nitronex and the nitronex logo are registered trademarks of nitronex, llc. all other product or service names are the property of their respective owners. ? nitronex, llc 2012. all rights reserved. nds-010 rev. 4, april 2013
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